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Hayashi, Kazuhiko; Kawasuso, Atsuo; Ichimiya, Ayahiko
e-Journal of Surface Science and Nanotechnology (Internet), 4, p.510 - 513, 2006/05
no abstracts in English
Fukaya, Yuki; Kawasuso, Atsuo; Ichimiya, Ayahiko
e-Journal of Surface Science and Nanotechnology (Internet), 4, p.435 - 438, 2006/04
no abstracts in English
Takahashi, Masamitsu; Kaizu, Toshiyuki; Mizuki, Junichiro
e-Journal of Surface Science and Nanotechnology (Internet), 4, p.426 - 430, 2006/04
A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of a combination of synchrotron radiation and a two-dimensional X-ray detector, X-ray diffraction intensity mappings in the reciprocal space have been measured during growth at a rate of 9.6 s per frame. This method provides information on strain distribution and height of Stranski-Krastanov islands under the in situ condition. Because the use of X-rays is not hindered by ambient pressure, this technique is suitable for industry-oriented applications such as organometallic vapor-phase epitaxy as well.
compounds evolved in atomistically mixed thin filmsSakai, Seiji; Naramoto, Hiroshi; Yaita, Tsuyoshi; Maekawa, Masaki; Kawasuso, Atsuo; Avramov, P.; Narumi, Kazumasa; Baba, Yuji
no journal, ,
no abstracts in English
